laser diode 820nm100mW
Output Power, CW Pmax: 110 mW
LD Reverse Voltage Vreverse: 2 V
PD Reverse Voltage VR(PD) :20 V
Operating Case Temperature Top: -10 to +75
Storage Temperature Tstor: -40 to +80
Center Wavelength@ Pop λo :808nm -820nm- 828nm
Output Power, CW Pop :100mW
Threshold Current ITH : 40mA -70mA
Operating Current CW @ Pop Iop :145mA- 210mA
Operating Voltage @ Pop Vop : 2.1V -3.0V
Slope Efficiency η :0.7W/A 0.95W/A
Monitor PD Current @ Pop Imon: 0.05mA -0.15mA- 0.75mA
Polarization Extinction Ratio (TE/TM) PER : 20dB
Beam Divergence (FWHM) @ Pop
Parallel θ∥ :7- 9- 12deg
Perpendicular θ: 13- 17- 22deg
Off-Axis Deviation @ Pop
Parallel Δθ∥ :-3 to 3deg
Perpendicular Δθ: -3 to 3deg
Emission Point Accuracy ΔX, ΔY, ΔZ : – 80μm to + 80μm
GZYSLED’ 820 nm, 100 mW laser diode is suited for a variety of applications, including IR illumination and
instruments for sensing, measurement, and imaging. Packaged in a ∅5.6 mm TO can with a C pin configuration,
this single spatial mode laser diode exhibits minimal thermal rollover at elevated temperatures. The diode has a
low aspect ratio with similar divergence along the parallel and perpendicular axes. It is recommended to have
the base of the laser diode in good thermal contact with a heat sink
